Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

2008-10-05

2011-10-04

Tran, Minh-Loan T (Department: 2826)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21636, C257SE21026, C257SE21259

Reexamination Certificate

active

08030149

ABSTRACT:
Embodiments relate to a method for manufacturing a semiconductor device, and in particular to a method for manufacturing a semiconductor device capable of simplifying a silicide manufacturing process using a photo resist overhang structure. According to embodiments, a surface is subjected to a monochlorobenzene coating processing to cure the surface of the exposed photo resist so as not to react with developing solution and such a processed photo resist is developed to make the lower of the photo resist in the overhang structure so as to form an accurate pattern according to the clear removal of the oxide film, making it possible to simply manufacture the silicide and the non-silicide without performing an etching process by a subsequent cobalt deposition process.

REFERENCES:
patent: 6455904 (2002-09-01), Noda
patent: 2004/0157469 (2004-08-01), Ito
patent: 2007/0099126 (2007-05-01), Chang et al.

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