Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-01-08
2011-10-18
Nguyen, Ha Tran T (Department: 2829)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S478000, C438S491000, C438S510000, C438S514000, C438S520000, C438S525000, C438S528000
Reexamination Certificate
active
08039330
ABSTRACT:
The invention is directed to a method for manufacturing a semiconductor. The method comprises steps of providing a substrate having a gate structure formed thereon and forming a source/drain extension region in the substrate adjacent to the gate structure. A spacer is formed on the sidewall of the gate structure and a source/drain region is formed in the substrate adjacent to the spacer but away from the gate structure. A bevel carbon implantation process is performed to implant a plurality carbon atoms into the substrate and a metal silicide layer is formed on the gate structure and the source/drain region.
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Cheng Tzyy-Ming
Huang Cheng-Tung
Hung Wen-Han
Jeng Li-Shian
Lee Kun-Hsien
Chi Suberr
King Justin
Nguyen Ha Tran T
United Microelectronics Corp.
WPAT, PC
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