Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

2009-05-19

2011-10-25

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21546

Reexamination Certificate

active

08043917

ABSTRACT:
A method for manufacturing a semiconductor device includes forming a silicon substrate having first and second surfaces, the silicon substrate including no oxide film or an oxide film having a thickness no greater than 100 nm, forming a first oxide film at least on the second surface of the silicon substrate, forming a first film by covering at least the first surface, forming a mask pattern on the first surface by patterning the first film, forming a device separating region on the first surface by using the mask pattern as a mask, forming a gate insulating film on the first surface, forming a gate electrode on the first surface via the gate insulating film, forming a source and a drain one on each side of the gate electrode, and forming a wiring layer on the silicon substrate while maintaining the first oxide film on the second surface.

REFERENCES:
patent: 6525402 (2003-02-01), Matsumoto et al.
patent: 6767782 (2004-07-01), Saikawa et al.
patent: 6809334 (2004-10-01), Yamada
patent: 2007/0269949 (2007-11-01), Sumino et al.
patent: 2009/0256173 (2009-10-01), Chen et al.
patent: 2000-091175 (2000-03-01), None
patent: 2002-299587 (2002-10-01), None
patent: 2002-334927 (2002-11-01), None

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