Method for manufacturing semiconductor device

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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Details

C438S386000, C257S301000, C257SE21008, C257SE27016

Reexamination Certificate

active

08071439

ABSTRACT:
A method for manufacturing a semiconductor device includes forming a first interlayer insulating film over a semiconductor substrate; forming a first opening in the first interlayer insulating film; forming a second interlayer insulating film on the first interlayer insulating film such that the first opening is not filled; and forming a second opening in the second interlayer insulating film such that the second opening is connected to the first opening.

REFERENCES:
patent: 6150281 (2000-11-01), Kwean
patent: 6743693 (2004-06-01), Fujiishi
patent: 2006/0032833 (2006-02-01), Kawaguchi et al.
patent: 2007/0048976 (2007-03-01), Raghu
patent: 2008/0308854 (2008-12-01), Takaishi
patent: 2009/0108402 (2009-04-01), Bae et al.
patent: 2000-003883 (2000-01-01), None
patent: 2000-021985 (2000-01-01), None
patent: 2004-311918 (2004-11-01), None
patent: 2005-332978 (2005-12-01), None
patent: 2007-027180 (2007-02-01), None

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