Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-12-12
2010-02-02
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S369000, C438S373000, C438S514000, C438S519000
Reexamination Certificate
active
07655526
ABSTRACT:
Disclosed is a method for manufacturing a semiconductor device. The method for manufacturing a semiconductor device includes the steps of forming a gate electrode on a semiconductor substrate, forming a drift area in the semiconductor substrate by implanting a dopant using the gate electrode as a mask, forming a sidewall spacer at sides of the gate electrode, and forming a source/drain area in the semiconductor substrate by implanting a dopant using the gate electrode and the sidewall spacer as a mask.
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Ki Ju Baek; “Method of Manufacturing Power Mosfet Using Enhanced Arrangement of LDD Region for Reducing On-Resistance without Degradation of Breakdown Voltage Characteristics”; Korean Patent Abstracts; Publication No. 1020050101616 A; Publication Date: Oct. 25, 2005; Korean Intellectual Property Office, Republic of Korea.
Korean Office Action dated Nov. 14, 2006; Korean Patent Application No. 10-2005-0132334; Korean Intellectual Property Office, Republic of Korea.
Brown Turner Sharon E.
Dongbu Electronics Co. Ltd.
Fortney Andrew D.
Le Dung A.
The Law Offices of Andrew D. Fortney
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