Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Reexamination Certificate
2005-08-03
2010-06-08
Norton, Nadine (Department: 1792)
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
C438S629000, C438S646000, C438S687000, C438S689000, C438S712000, C438S148000, C430S322000, C430S312000, C430S323000, C430S324000, C257S062000, C257S762000
Reexamination Certificate
active
07732334
ABSTRACT:
It is an object of the present invention to provide a method for manufacturing a substrate having film patterns such as an insulating film, a semiconductor film, and a conductive film in simple processes. It is another object of the invention to provide a method for manufacturing a semiconductor device with high throughput and high yield at low cost. A method for manufacturing a semiconductor device including the steps of: forming a first film over a substrate; discharging a solution containing a mask material to the first film thereby forming a mask over the first film; patterning the first film with the use of the mask thereby forming low wettability regions and a high wettability region over the substrate; removing the mask; and discharging a solution containing a material of an insulating film, a semiconductor film, or a conductive film to the high wettability region provided between the low wettability regions thereby forming a pattern of the insulating film, the semiconductor film, or the conductive film.
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Office Action, (Application No. 200510091142.4; CN08101), dated Aug. 14, 2009 with English Translation.
Fujii Gen
Morisue Masafumi
Angadi Maki
Costellia Jeffrey L.
Nixon & Peabody LLP
Norton Nadine
Semiconductor Energy Laboratory Co,. Ltd.
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