Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

2008-06-27

2010-10-12

Nhu, David (Department: 2895)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Plasma

C438S687000, C438S688000, C438S712000, C257SE21006, C257SE21170, C257SE21218, C257SE21249, C257SE21267, C257SE21319, C257SE21304, C257SE21321

Reexamination Certificate

active

07811912

ABSTRACT:
A method for manufacturing a semiconductor device includes the steps of forming a first insulation layer on a substrate; forming a damascene pattern in the first insulation layer; conducting a first process for forming metal lines in the damascene pattern; conducting a second process for forming a second insulation layer, having compressive stress greater than tensile stress of the metal lines, on the damascene pattern including the metal lines; forming a passivation layer on the substrate after multi-layered metal lines are formed by the first and second processes; and conducting an annealing process for the substrate including the passivation layer.

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