Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

2006-09-20

2009-11-24

Tran, Minh-Loan T (Department: 2826)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S714000, C438S717000

Reexamination Certificate

active

07622340

ABSTRACT:
A method for manufacturing a semiconductor device includes doping a surface of a silicon-containing dielectric film with nitrogen to change an etching rate of the silicon-containing dielectric film relative to a predetermined solution such that the etching rate is lower at a surface portion doped with nitrogen than at a portion therebelow. The method subsequently includes patterning the silicon-containing dielectric film by a first etching process to form an etching mask, subsequently to the first etching process, removing etching residues of the silicon-containing dielectric film by a second etching process including wet etching using the predetermined solution, and subsequently to the second etching process, patterning an etching target film by a third etching process using the etching mask.

REFERENCES:
patent: 2003/0153150 (2003-08-01), Dong et al.
patent: 2006/0261037 (2006-11-01), Ohmi et al.
patent: 2007/0004931 (2007-01-01), Xiao et al.
patent: 2007/0048919 (2007-03-01), Adetutu et al.
patent: 2007/0069298 (2007-03-01), Lu et al.
patent: 2007/0111538 (2007-05-01), Iyer et al.
patent: 2007/0129273 (2007-06-01), Clark et al.
S. B. Samavedam, et al., “Dual-Metal Gate CMOS with HfO2Gate Dielectric,” IEDM Tech. Digest, 2002, 4 pages.

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