Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-08-19
2009-10-27
Nhu, David (Department: 2895)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S238000, C438S381000, C257SE21170, C257SE21267, C257SE21324, C257SE21646, C257SE21649
Reexamination Certificate
active
07608502
ABSTRACT:
In the process for manufacturing a semiconductor device of the present invention, a capacitor dielectric film is deposited via an atomic layer deposition employing an organic source material containing one or more metallic element(s) selected from the group consisting of Zr, Hf, La and Y as a deposition gas. The process for manufacturing a capacitor of the present invention includes obtaining a boundary temperature T (degree C.), at which an increase in a deposition rate for depositing the capacitor dielectric film as increasing the temperature is detected, on the basis of a correlation data of a deposition temperature in the atomic layer deposition employing the deposition gas with a deposition rate for depositing the capacitor dielectric film at the deposition temperature (S100and S102); and depositing the capacitor dielectric film via the atomic layer deposition employing the deposition gas at a temperature within a range of from (T−20) (degree C.) to (T+20) (degree C.) (S104to S112).
REFERENCES:
patent: 6238964 (2001-05-01), Cho
patent: 6339007 (2002-01-01), Wang et al.
patent: 6355516 (2002-03-01), Kim et al.
patent: 6509593 (2003-01-01), Inoue et al.
patent: 6913970 (2005-07-01), Inoue et al.
patent: 6982205 (2006-01-01), Joo et al.
patent: 7297591 (2007-11-01), Won et al.
patent: 2003-243526 (2003-08-01), None
Fukumaki Naomi
Iino Tomohisa
Kato Yoshitake
Yamamoto Tomoe
NEC Electronics Corporation
Nhu David
Sughrue & Mion, PLLC
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