Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-05-06
2008-10-21
Everhart, Caridad M (Department: 2895)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S660000, C438S423000, C257SE21375, C257SE21419
Reexamination Certificate
active
07439137
ABSTRACT:
In a MOSFET, after an element region is formed, a wiring layer is formed subsequently to a barrier metal layer, and hydrogen annealing is performed. However, in the case of an n-channel MOSFET, a threshold voltage is lowered due to an occlusion characteristic of the barrier metal layer. Thus, an increased impurity concentration in a channel layer causes a problem that reduction in an on-resistance is inhibited. According to the present invention, after a barrier metal layer is formed, an opening is provided in the barrier metal layer on an interlayer insulating film, and hydrogen annealing treatment is performed after a wiring layer is formed. Thus, an amount of hydrogen which reaches a substrate is further increased, and lowering of a threshold voltage is suppressed. Moreover, since an impurity concentration in a channel layer can be lowered, an on-resistance is reduced.
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Taiwanese Office Action dated Jul. 30, 2007, directed to counterpart TW application No. 094110804.
Chinese Office Action dated Sep. 21, 2007, directed to counterpart CN application No. 2005100674753.
Ishida Hiroyasu
Kubo Hirotoshi
Miyahara Shouji
Onda Masato
Everhart Caridad M
Morrison & Foerster / LLP
Sanyo Electric Co,. Ltd.
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