Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Multiple layers
Reexamination Certificate
2005-05-31
2008-07-08
Toledo, Fernando L. (Department: 2823)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Multiple layers
C438S283000, C438S289000, C438S787000, C257SE21705, C257SE21598, C257SE21532
Reexamination Certificate
active
07396775
ABSTRACT:
The present invention discloses improved method for manufacturing semiconductor device wherein the gate oxide films in the cell region, VPPperipheral circuit region and VDDperipheral circuit region are formed to have different thicknesses from one another so that the threshold voltage of the cell transistor may be increased to a desired value as well as increasing the operation speed of the transistor and suppress the short channel effect.
REFERENCES:
patent: 4679311 (1987-07-01), Lakhani et al.
patent: 5953599 (1999-09-01), El-Diwany
patent: 6436777 (2002-08-01), Ota
patent: 6670248 (2003-12-01), Ang et al.
patent: 6750525 (2004-06-01), Yim
patent: 6933195 (2005-08-01), Lee
patent: 2002/0033501 (2002-03-01), Sakagami
patent: 2003/0145299 (2003-07-01), Fried et al.
patent: 2005/0186742 (2005-08-01), Oh et al.
patent: 1020000044855 (2000-07-01), None
C.H. Lee et al., “Novel Body Tied FinFET Cell Array Transistor DRAM with Negative Word Line Operation for sub 60nm Technology and beyond”, 2004 Symposium on VLSI Technology Digest of Technical Papers, pp. 130-131.
Hynix Semiconductor Inc. Inc.
Jefferson Quovaunda
Toledo Fernando L.
Townsend and Townsend / and Crew LLP
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