Method for manufacturing semiconductor device

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

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438221, 438224, H01L 218238

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active

059372869

ABSTRACT:
To form a device isolating deep trench adjacent to a well, the deep trench is formed by using, as a mask, a photoresist mask used for forming the well and a silicon oxide film or a polysilicon film formed on a semiconductor substrate and patterned by an etching using another photoresist mask which was used for forming an adjacent well, or two patterned insulating layers formed on the semiconductor substrate. Thus, the deep trench for the device isolation can be formed without adding a photoresist step for forming a trench formation pattern. In addition, since a lift-off process is not used for forming the deep trench, an isolation trench having a narrow width can be formed, and also, there does not occur the re-deposition of the peeled-off plasma CVD insulating film onto the semiconductor substrate, with the result that the stability in manufacturing the semiconductor device is remarkably elevated.

REFERENCES:
patent: 4876214 (1989-10-01), Yamaguchi et al.
patent: 5449367 (1995-09-01), Saito et al.

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