Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

2007-10-30

2007-10-30

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S381000, C438S954000, C257SE21058, C257SE21545

Reexamination Certificate

active

11024740

ABSTRACT:
A method of manufacturing a semiconductor device including forming an ONO film on a semiconductor substrate and a hard mask layer on the ONO film, forming a trench by etching the hard mask layer and the ONO film on a field region of the semiconductor substrate using a photo etch process and etching the field region of the semiconductor substrate, and forming a device separator at the trench. The method also includes exposing the ONO film by removing the hard mask layer on the ONO film, and leaving the ONO film only on a prospective SONOS gate in a cell region of the semiconductor substrate and removing the ONO film the remainder region thereof. The method further includes forming a gate oxide film on the semiconductor substrate at an outside of the ONO film, and forming a gate electrode on the gate oxide film and the ONO film, respectively.

REFERENCES:
patent: 6284603 (2001-09-01), Ho Simon et al.
patent: 6436768 (2002-08-01), Yang et al.
patent: 6524914 (2003-02-01), He et al.
patent: 6541816 (2003-04-01), Ramsbey et al.
patent: 6653189 (2003-11-01), Haddad et al.

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