Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

2007-10-09

2007-10-09

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S296000, C438S427000, C438S700000

Reexamination Certificate

active

10998947

ABSTRACT:
The present invention provides a technology for forming the trenches having different depths in one semiconductor substrate, which enables easily conducting the photo resist process employed for the etch process and forming trenches at higher depth dimension accuracy. The openings of the first films are formed in the semiconductor substrate to expose surfaces of the semiconductor substrate, the semiconductor substrate is etched through the openings to a depth of the shallower trench and then the cell region is covered with the second photo resist pattern, and the peripheral region is etched through the first films to form the deeper trench. Since the etch process is conducted under the conditions, in which the surfaces of the semiconductor substrate are exposed (opened) within the openings in the first film, trenches having different depths can be formed with higher depth dimension accuracy by suitably controlling the etch conditions.

REFERENCES:
patent: 5674775 (1997-10-01), Ho et al.
patent: 5677233 (1997-10-01), Abiko
patent: 6150234 (2000-11-01), Olsen
patent: 6406976 (2002-06-01), Singh et al.
patent: 6440816 (2002-08-01), Farrow et al.
patent: 6949801 (2005-09-01), Parat et al.
patent: 6995095 (2006-02-01), Yu
patent: 7078286 (2006-07-01), Mehta
patent: 7087498 (2006-08-01), Pita et al.
patent: 2002/0190342 (2002-12-01), Hur
patent: 2003/0045071 (2003-03-01), Hong et al.
patent: 2003/0211702 (2003-11-01), Parat et al.
patent: 2006/0220171 (2006-10-01), Choi et al.
patent: 60-92632 (1985-05-01), None
patent: 2001-168184 (2001-06-01), None

Affiliated with

Also associated with

Rating

Method for manufacturing semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3866054