Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

1997-09-03

1998-08-18

Dang, Trung

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

435225, 435228, 435443, H01L 218238

Patent

active

057958025

ABSTRACT:
A method for manufacturing a semiconductor device, the method includes the steps of forming an n-type well and a p-type well under a surface of a semiconductor substrate, forming a pad oxide layer having a first thickness on the p-type well and a second thickness on the n-type well, the first thickness being greater than the second thickness, and forming a field oxide layer between the n-type well and the p-type well, the field oxide layer having less bird's beak on the n-type well than on the p-type well.

REFERENCES:
patent: 4462846 (1984-07-01), Varshney
patent: 4710265 (1987-12-01), Hotta
patent: 4929565 (1990-05-01), Parrillo
patent: 5024961 (1991-06-01), Lee et al.
patent: 5455438 (1995-10-01), Hashimoto et al.

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