Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-08-21
2007-08-21
Fourson, George R. (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S308000, C438S259000, C438S275000, C257SE21497, C257SE21619, C257SE21621, C257SE21627, C257SE21634
Reexamination Certificate
active
11003493
ABSTRACT:
In a method for manufacturing a semiconductor device, gate insulation films and gate electrodes are first formed on a substrate. An impurity is implanted into each gate electrode. Next, a first heat treatment is performed to the substrate for diffusing the impurity in the gate electrodes. After the heat treatment, a second heat treatment is performed for releasing stress generated in the substrate in the first heat-treatment. Thereafter, an impurity is implanted into an area to become an implanted region of the substrate, using the gate electrodes as masks, and a third heat treatment is performed for activating the impurity implanted.
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Fourson George R.
Leydig , Voit & Mayer, Ltd.
Maldonado Julio J.
NEC Electronics Corporation
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