Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2006-05-23
2006-05-23
Dang, Phuc T. (Department: 2818)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S768000, C438S787000
Reexamination Certificate
active
07049248
ABSTRACT:
The present invention discloses a method for manufacturing semiconductor device wherein a cleaning process of a buffer layer is performed prior to a formation of a nitride film. The cleaning process allows to maintain the deposition thickness of the nitride film even when the time between the formation of the buffer layer and the formation of the nitride film is long.
REFERENCES:
patent: 5936300 (1999-08-01), Sasada et al.
patent: 6010936 (2000-01-01), Son
patent: 6037204 (2000-03-01), Chang et al.
patent: 6074919 (2000-06-01), Gardner et al.
patent: 6083795 (2000-07-01), Liang et al.
patent: 6180543 (2001-01-01), Yu et al.
patent: 6232164 (2001-05-01), Tsai et al.
patent: 6294448 (2001-09-01), Chang et al.
patent: 6626967 (2003-09-01), Takami et al.
patent: 6683356 (2004-01-01), Tsuchiaki
patent: 6858543 (2005-02-01), Lee et al.
patent: 03-046224 (1991-02-01), None
patent: 03-276718 (1991-12-01), None
Lee Min Yong
Park Dong Su
Dang Phuc T.
Heller Ehrman LLP
Hynix / Semiconductor Inc.
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