Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-02-28
2006-02-28
Guerrero, Maria F. (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S223000, C438S227000, C438S228000, C438S514000, C438S522000, C438S519000, C438S546000
Reexamination Certificate
active
07005340
ABSTRACT:
A method is provided for manufacturing a semiconductor device that can reduce the number of steps in manufacturing a triple-well that includes multiple ion implantation steps and heat treatment steps. The method comprises the steps of: (a) forming a first mask layer having a first opening section on a semiconductor substrate; (b) forming a first dielectric layer on an exposed surface of the semiconductor substrate in the first opening section; (c) forming an impurity layer by introducing a first impurity of a second conductivity type in the semiconductor substrate through the first dielectric layer; (d) conducting a heat treatment to form a first well, and a second dielectric layer on the exposed surface of the semiconductor substrate in the first opening section; (e) forming a second mask layer having a second opening section on the first mask layer; and (f) forming a second well within the first well by introducing a second impurity of the first conductivity type in the semiconductor substrate through the second dielectric layer.
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Guerrero Maria F.
Harness & Dickey & Pierce P.L.C.
Seiko Epson Corporation
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