Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-07-18
2006-07-18
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S634000, C438S637000, C257S758000
Reexamination Certificate
active
07078332
ABSTRACT:
The present invention discloses a method for manufacturing a semiconductor device, comprising the steps of: providing a semiconductor substrate on which cell strings are formed and in which a plurality of conductive regions are formed; sequentially forming a first interlayer insulation film and a first etch barrier film on the semiconductor substrate; forming a plurality of contact holes by exposing the plurality of conductive regions formed in the semiconductor substrate, wherein an impurity concentration of the conductive regions is reduced due to the process for forming the contact holes; filling a metal material in the contact holes and forming a plurality of contact plugs; sequentially forming a second interlayer insulation film, a second etch barrier film and a third interlayer insulation film over a resulting structure including the contact plugs; forming a plurality of metal line patterns, wherein the metal line patterns pass through the third interlayer insulation film, the second etch barrier film and the second interlayer insulation film and contact to the contact plugs; forming a fourth interlayer insulation film over a resulting structure including the plurality of metal line patterns; forming a plurality of metal line contact holes by patterning the fourth interlayer insulation film; and forming a plurality of metal line contact plugs in the plurality of metal line contact holes by filling a metal material in the metal line contact holes.
REFERENCES:
patent: 6531407 (2003-03-01), Huang et al.
patent: 6885105 (2005-04-01), Kakamu et al.
patent: 2005/0151262 (2005-07-01), Tamaru et al.
patent: 1020010027671 (2001-04-01), None
patent: 1020020011476 (2002-02-01), None
Jeong Cheol Mo
Kim Tae Kyung
Jr. Carl Whitehead
Rodgers Colleen E.
LandOfFree
Method for manufacturing semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for manufacturing semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3613180