Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

2005-10-25

2005-10-25

Nguyen, Ha (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S301000, C438S306000

Reexamination Certificate

active

06958279

ABSTRACT:
A gate insulator film and a gate electrode are formed on a semiconductor substrate, and then a layered stack of a SiO2film and a SiN film is formed on the entire surface. Subsequently, sidewalls made of polysilicon film are formed adjacent to the gate electrode via the layered stack of the SiO2film and the SiN film. Then, using as a mask the gate electrode, portions of the layered stack adjacent to the gate electrode, and the sidewalls, an ion dopant is implanted into a device active region to thereby form source/drains therein, and the sidewalls are then removed. At this stage, since the gate insulator film is completely covered with the layered stack, the gate insulator film is not ablated or retreated even on a device isolation insulator film.

REFERENCES:
patent: 6596599 (2003-07-01), Guo
patent: 6624483 (2003-09-01), Kurata

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