Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

2005-05-10

2005-05-10

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Multiple layers

C438S909000, C438S959000

Reexamination Certificate

active

06890866

ABSTRACT:
A method for manufacturing a semiconductor device having a semiconductor substrate with a contact hole filled by an aluminum-containing thin film. This manufacturing method includes a step of forming a silicon-containing thin film so as to fill the contact hole on the surface of the semiconductor substrate, a step of removing the part of the silicon-containing thin film outside the contact hole, a step of forming an aluminum-containing thin film on the surface of the semiconductor substrate after completing the step of removing the part of the silicon-containing substrate, and a step of heating the semiconductor substrate on which the aluminum-containing thin film is formed to such a temperature as to cause silicon to diffuse with respect to aluminum.

REFERENCES:
patent: 6403446 (2002-06-01), Ishitsuka et al.
patent: 6503802 (2003-01-01), Kim
patent: 2003-303785 (2003-10-01), None

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