Method for manufacturing semiconductor device

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

Reexamination Certificate

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C430S312000, C430S313000, C438S401000

Reexamination Certificate

active

06878506

ABSTRACT:
The manufacturing method of the semiconductor device provides reduction of the photoresist film distortion occurred in a development procedure and, as a result, makes measurement of the place difference of the photoresist mask correct. The manufacturing method of the semiconductor device to be published are those the photoresist film consisting the upper alignment-measuring mark is placed more than about 200 μm from an corner in device forming region formed adjoining scribing region, along with X-direction which is the measurement direction in scribing region formed on semiconductor substrate.

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patent: 5138176 (1992-08-01), Nishi
patent: 6667253 (2003-12-01), Song et al.
patent: 20040075179 (2004-04-01), Liu et al.
patent: 20040086793 (2004-05-01), Sreenivasan et al.
patent: 20040092080 (2004-05-01), Chen
patent: 20040102014 (2004-05-01), Ning et al.

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