Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2009-08-07
2010-11-09
Nguyen, Ha Tran T (Department: 2829)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S257000
Reexamination Certificate
active
07829414
ABSTRACT:
An isolation oxide film whose upper surface is higher than a surface of a substrate is formed in the substrate. A silicon oxide film is formed on the substrate between the isolation oxide films. A self-aligned polysilicon film is formed on the silicon oxide film between the isolation oxide films. After forming a resist pattern covering the peripheral circuitry, the isolation oxide films in the memory cell are etched by a predetermined thickness. An ONO film is formed on the entire surface of the substrate, a second resist pattern covering the memory cell is formed. Then, the ONO film, the polysilicon film8and the silicon oxide film7are removed from the peripheral circuitry.
REFERENCES:
patent: 6580117 (2003-06-01), Shimizu
patent: 2000-150834 (2000-05-01), None
patent: 2003-23115 (2003-01-01), None
patent: 2003-078047 (2003-03-01), None
Japanese Office Action issued in Japanese Patent Application No. JP 2004-200913 dated Feb. 2, 2010.
Brown Valerie
McDermott Will & Emery LLP
Nguyen Ha Tran T
Renesas Electronics Corporation
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