Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-12-27
2008-09-02
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S595000, C257SE21689
Reexamination Certificate
active
07419876
ABSTRACT:
A method manufactures non-volatile memory devices integrated on a semiconductor substrate and including a matrix of non-volatile memory cells and associated circuitry. The manufacturing method includes: forming a plurality of electrodes of the matrix memory cells, each electrode including a first dielectric layer, a first conductive layer, a second dielectric layer and a second conductive layer; and forming a plurality of electrodes of transistors of the circuitry each including a first dielectric layer and a first conductive layer. The method also includes forming first coating spacers on the side walls of the gate electrodes of the memory cell and second coating spacers on the side walls of the gate electrodes of the circuitry, the second spacers being wider than the first spacers.
REFERENCES:
patent: 6274411 (2001-08-01), Patelmo et al.
patent: 6798015 (2004-09-01), Kasuya
Albini Giulio
Cremonesi Carlo
Grossi Alessandro
Chaudhari Chandra
Iannucci Robert
Jorgenson Lisa K.
Seed IP Law Group PLLC
STMicroelectronics S.r.l.
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