Method for manufacturing non-volatile memory devices...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S595000, C257SE21689

Reexamination Certificate

active

07419876

ABSTRACT:
A method manufactures non-volatile memory devices integrated on a semiconductor substrate and including a matrix of non-volatile memory cells and associated circuitry. The manufacturing method includes: forming a plurality of electrodes of the matrix memory cells, each electrode including a first dielectric layer, a first conductive layer, a second dielectric layer and a second conductive layer; and forming a plurality of electrodes of transistors of the circuitry each including a first dielectric layer and a first conductive layer. The method also includes forming first coating spacers on the side walls of the gate electrodes of the memory cell and second coating spacers on the side walls of the gate electrodes of the circuitry, the second spacers being wider than the first spacers.

REFERENCES:
patent: 6274411 (2001-08-01), Patelmo et al.
patent: 6798015 (2004-09-01), Kasuya

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for manufacturing non-volatile memory devices... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing non-volatile memory devices..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing non-volatile memory devices... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3971456

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.