Method for manufacturing non-volatile memory devices

Details Method for manufacturing non-volatile memory devices Method for manufacturing non-volatile memory devices

2005-04-26

2005-04-26

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S263000, C438S296000

Reexamination Certificate

active

06884680

ABSTRACT:
A manufacturing method for a non-volatile memory device includes the steps of forming a well and a channel in a silicon substrate, depositing a tunnel oxide layer, a first polysilicon layer and a nitride layer sequentially, and then performing a trench etching thereof to thereby form a self-align flash memory device.

REFERENCES:
patent: 6825523 (2004-11-01), Caprara et al.

Affiliated with

Also associated with

Rating

Method for manufacturing non-volatile memory devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing non-volatile memory devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing non-volatile memory devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3412845