Method for manufacturing NAND flash device

Details Method for manufacturing NAND flash device Method for manufacturing NAND flash device

2007-12-04

2007-12-04

Nguyen, Thanh (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21690

Reexamination Certificate

active

11137895

ABSTRACT:
Disclosed is a method for manufacturing a NAND flash device. After a source line plug hole is formed, a drain contact plug hole is formed. The holes are filled with a conductive material film and are then polished. It is therefore possible to simplify the process since a blanket etch process step is omitted. Moreover, loss of a drain contact plug by the blanket etch process is prevented. It is therefore possible to improve the electrical properties of a device and reduce the manufacturing cost price.

REFERENCES:
patent: 6115287 (2000-09-01), Shimizu et al.
patent: 6930001 (2005-08-01), Gil
patent: 7223655 (2007-05-01), Gil
patent: 2003/0085421 (2003-05-01), Takeuchi et al.

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