Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2004-12-03
2008-03-04
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S210000, C438S239000, C438S240000, C438S396000, C029S025030
Reexamination Certificate
active
07338854
ABSTRACT:
A method for manufacturing a multilayer ceramic capacitor, in which internal electrodes printed on each of a plurality of dielectric sheets have reduced thicknesses using an absorption member, thereby allowing the multilayer ceramic capacitor to have a high capacity and be minimized. The method includes printing the internal electrodes on each of the dielectric sheets, and stacking the dielectric sheets, wherein the internal electrodes formed on each of the dielectric sheets have a reduced thickness by causing an absorptive member to contact the surface of each of the dielectric sheets provided with the internal electrodes and then separating the absorptive member from the surface so that portions of the internal electrodes having a designated thickness are eliminated, and the dielectric sheets provided with the internal electrodes having the reduced thickness are stacked to form a chip element.
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Japanese Patent Office Action mailed Nov. 27, 2007 English Translation.
Choo Ho Sung
Kim Hyoung Ho
Kim Yong Suk
Lee Jung Woo
Ra Seung Hyun
Fourson George
García Joannie Adelle
Lowe Hauptman Ham & Berner
Samsung Electro-Mechanics Co. Ltd.
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