Method for manufacturing MOS transistor

Details Method for manufacturing MOS transistor Method for manufacturing MOS transistor

1999-03-16

1999-10-26

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438306, 438279, 438595, 438976, H01L 21336

Patent

active

059727640

ABSTRACT:
A method for manufacturing a metal-oxide-semiconductor (MOS) transistor is described. In the invention, doped regions of the local pocket type are formed in the substrate after the source/drain terminals of a MOS transistor in the logic circuit area are formed. The method includes the steps of forming an insulation layer over the entire substrate. Then, a portion of the insulation layer is removed to expose the spacers on the sidewalls of the gate electrode. Subsequently, the spacers are removed, and then an ion implantation operation is conducted to implant dopants into the substrate through the windows formed by the uprooted spacers. Ultimately, doped regions of the local pocket type are formed in the substrate under the lightly doped drain source/drain terminals of a MOS transistor.

REFERENCES:
patent: 5234850 (1993-08-01), Liao
patent: 5595919 (1997-01-01), Pan
patent: 5736446 (1998-04-01), Wu

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