Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-03-13
2007-03-13
Ghyka, Alexander (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S626000, C438S631000, C438S642000, C438S645000, C257SE21586
Reexamination Certificate
active
10739578
ABSTRACT:
A method for manufacturing a metal structure using a trench includes etching a semiconductor substrate to form a trench, depositing a seed layer over the semiconductor substrate including in the trench, stacking an insulating layer over the seed layer, removing a portion of the insulating layer to expose a portion of the seed layer at a bottom of the trench, filling the trench with a metal material, and removing the seed layer and the insulating layer on the semiconductor substrate. As a result, a subsequent process in forming a multi-layered structure may be easily carried out, thereby simplifying a manufacturing process.
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Choi Sang-on
Na Kyung-won
Park Hae-seok
Shim Dong-sik
Ghyka Alexander
Lee & Morse P.C.
Samsung Electronics Co,. Ltd.
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