Method for manufacturing memory cell with trench capacitor

Details Method for manufacturing memory cell with trench capacitor Method for manufacturing memory cell with trench capacitor

1999-01-22

2000-11-07

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438386, H01L 218242

Patent

active

061435996

ABSTRACT:
A memory cell includes a transistor and a capacitor that is a doped polysilicon filled trench. A doped polycrystalline strap provides a low resistance connection between a source region of the transistor and the polysilicon fill and is shaped to overlie both a top surface and a side surface of the source region of the transistor.

REFERENCES:
patent: 5937292 (1999-08-01), Hammeri et al.
patent: 5942778 (1999-08-01), Oikawa

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