Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-06-07
2005-06-07
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S278000
Reexamination Certificate
active
06902979
ABSTRACT:
A method for manufacturing a mask ROM of flat cell structure. The method includes the steps of: providing a semiconductor substrate having a flat cell array region and a peripheral circuit region; forming a first and a second mask patterns exposing a substrate portions corresponding to a diffusion layer formation region of the flat cell array region and a device isolation layer of the peripheral circuit region; ion-implanting an impurity in the exposed substrate portions; forming a trench by etching the exposed substrate portion peripheral circuit region; forming a linear oxide layer on the first and the second mask patterns and the surface of the trench, a diffusion layer on the flat cell array region, and a barrier oxide layer on the surface of diffusion layer in accordance with a thermal oxidation process; depositing an oxide layer on the linear oxide layer to fill up the trench; polishing the oxide layer to expose the surface of the first and the second mask patterns; and forming a diffusion layer on the flat cell array region and a trench type isolation layer on the peripheral circuit region by removing the first and the second mask patterns.
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DongbuAnam Semiconductor Inc.
Keefer Timothy J.
Malsawma Lex H.
Seyfarth Shaw LLP
Smith Matthew
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