Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-12-12
2010-02-02
Landau, Matthew C (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S435000, C438S586000, C438S770000, C257SE21546, C257SE21550
Reexamination Certificate
active
07655524
ABSTRACT:
Embodiments relate to a semiconductor device and a method for manufacturing a semiconductor device. In embodiments, a transistor including the gate electrode and a source/drain may be formed between isolation layers and a contact may be connected to the source/drain. A barrier layer may be formed at a boundary between the isolation layer and the source/drain and may physically isolate the isolation layer from the source/drain.
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Definition of word “over ” from http://www.dictionary.com.
Dongbu Hi-Tek Co., Ltd.
Landau Matthew C
Nicely Joseph C.
Sherr & Vaughn, PLLC
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