Method for manufacturing isolation layer having barrier...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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Details

C438S435000, C438S586000, C438S770000, C257SE21546, C257SE21550

Reexamination Certificate

active

07655524

ABSTRACT:
Embodiments relate to a semiconductor device and a method for manufacturing a semiconductor device. In embodiments, a transistor including the gate electrode and a source/drain may be formed between isolation layers and a contact may be connected to the source/drain. A barrier layer may be formed at a boundary between the isolation layer and the source/drain and may physically isolate the isolation layer from the source/drain.

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