Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-03-26
2010-02-09
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S549000, C257SE21206
Reexamination Certificate
active
07659173
ABSTRACT:
A poly-silicon layer is deposited on a surface of a substrate after forming a gate insulating film in an element hole of a field insulating film12, and thereon a silicon oxide layer is formed by a thermal oxidation process. After patterning the silicon oxide layer in accordance with a gate electrode pattern, the poly-silicon layer is patterned by dry-etching using a remaining resist layer as a mask. After removing the resist layer, a gate electrode layer16ais formed by decreasing a width of the poly-silicon layer by isotropic etching using the silicon oxide layer18A as a mask. N+-type source and drain regions22and24and n−-type source and drain regions26and28are formed by doping impurity ions via the gate insulating film14through the silicon oxide layer18A. The silicon oxide layer18A may be made of a layer of tungsten silicide.
REFERENCES:
patent: 4682404 (1987-07-01), Miller et al.
patent: 5710054 (1998-01-01), Gardner et al.
patent: 6723609 (2004-04-01), Yang et al.
patent: 6-275635 (1994-09-01), None
Chaudhari Chandra
Dickstein & Shapiro LLP
Yamaha Corporation
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