Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-03-28
2006-03-28
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
Reexamination Certificate
active
07018888
ABSTRACT:
The present invention provides a method for manufacturing a semiconductor device and method for manufacturing an integrated circuit including the semiconductor device. The method for manufacturing a semiconductor device (100), among other steps, includes forming a gate structure (130) over a substrate (110), the gate structure (130) having sidewall spacers (210or410) on opposing sidewalls thereof and placing source/drain implants (310, 510) into the substrate (110) proximate the gate structure (130). The method further includes removing at least a portion of the sidewall spacers (210or410) and annealing the source/drain implants (310, 510) to form source/drain regions (710) after removing the at least a portion of the sidewall spacers (210or410).
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Chatterjee Amitava
Goodlin Brian E.
Siddiqui Shirin
Yoon Jong S.
Lebentritt Michael
McLarty Peter K.
Stevenson André C.
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