Method for manufacturing image sensor

Details Method for manufacturing image sensor Method for manufacturing image sensor

2007-07-31

2009-12-22

Nhu, David (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S475000, C438S680000, C438S663000, C257SE21170, C257SE21231, C257SE21248, C257SE21319, C257SE21499

Reexamination Certificate

active

07635625

ABSTRACT:
Disclosed is a method for manufacturing an image sensor. The method includes forming a polysilicon layer on a semiconductor substrate having an active region, forming a sacrificial layer on the polysilicon layer, forming a photoresist pattern on the sacrificial layer, implanting conductive impurities onto the polysilicon layer using the photoresist pattern as an ion implantation mask, removing the photoresist pattern, and removing the sacrificial layer from the polysilicon layer, thereby removing photoresist residues remaining on the sacrificial layer.

REFERENCES:
patent: 6204141 (2001-03-01), Lou
patent: 7217968 (2007-05-01), Adkisson et al.
patent: 2006/0118835 (2006-06-01), Ellis-Monaghan et al.
patent: 2006/0124976 (2006-06-01), Adkisson et al.
patent: 2007/0184614 (2007-08-01), Adkisson et al.
patent: 2008/0179639 (2008-07-01), Gambino et al.

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