Method for manufacturing high-stability resistors, such as...

Details Method for manufacturing high-stability resistors, such as... Method for manufacturing high-stability resistors, such as...

2009-11-24

2011-10-04

Nguyen, Khiem D (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S632000, C257SE21035, C257SE23116

Reexamination Certificate

active

08030712

ABSTRACT:
A method for protecting a circuit component on a semiconductor substrate from a plasma etching or other removal process includes forming a screening layer over an auxiliary layer to conceal at least an area of the auxiliary layer that overlays at least a portion of the circuit component, such as for example a high-ohmic poly resistor. The method transfers a pattern defined by a mask onto the screening layer by selectively removing portions of the screening layer in accordance with the pattern. Portions of the auxiliary layer that are not protected by the screening layer are removed using a plasma gas selective to the auxiliary layer material, without removing the area of the auxiliary layer that overlays the portion of the circuit component, thereby protecting the circuit component from the plasma gas via the screening layer and auxiliary layer.

REFERENCES:
patent: 5187122 (1993-02-01), Bonis
patent: 5656524 (1997-08-01), Eklund et al.
patent: 5825058 (1998-10-01), Suga
patent: 6797554 (2004-09-01), Katayama
patent: 7338852 (2008-03-01), Hsu
patent: 2005/0170596 (2005-08-01), Kim

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