Fringe capacitor using bootstrapped non-metal layer

Details Fringe capacitor using bootstrapped non-metal layer Fringe capacitor using bootstrapped non-metal layer

2006-03-20

2011-12-13

Warren, Matthew E (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S307000, C257SE29343

Reexamination Certificate

active

08076752

ABSTRACT:
Capacitors configured in a switched-capacitor circuit on a semiconductor device may comprise very accurately matched, high capacitance density metal-to-metal capacitors, using top-plate-to-bottom-plate fringe-capacitance for obtaining the desired capacitance values. A polysilicon plate may be inserted below the bottom metal layer as a shield, and bootstrapped to the top plate of each capacitor in order to minimize and/or eliminate the parasitic top-plate-to-substrate capacitance. This may free up the bottom metal layer to be used in forming additional fringe-capacitance, thereby increasing capacitance density. By forming each capacitance solely based on fringe-capacitance from the top plate to the bottom plate, no parallel-plate-capacitance is used, which may reduce capacitor mismatch. Parasitic bottom plate capacitance to the substrate may also be eliminated, with only a small capacitance to the bootstrapped polysilicon plate remaining. The capacitors may be bootstrapped by coupling the top plate of each capacitor to a respective one of the differential inputs of an amplifier comprised in the switched-capacitor circuit.

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