Method for manufacturing flash memory device

Details Method for manufacturing flash memory device Method for manufacturing flash memory device

2006-12-12

2006-12-12

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S910000, C257SE21150

Reexamination Certificate

active

07148109

ABSTRACT:
The present invention discloses a method for manufacturing a flash memory device which can minimize a hole current by impurity diffusion of floating gates, obtain a sufficient capacitance for a cell operation by increasing a breakdown voltage, and improve retention properties of a flash memory cell, by filing up an impurity on the interface between an oxide film and a polysilicon film, by forming the oxide film on the polysilicon film used as the floating gates, doping an impurity into the oxide film, and annealing the oxide film.

REFERENCES:
patent: 6187633 (2001-02-01), Dong et al.
patent: 6849897 (2005-02-01), Dong et al.

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