Method for manufacturing flash memory device

Details Method for manufacturing flash memory device Method for manufacturing flash memory device

2005-09-13

2005-09-13

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S257000, C438S264000, C438S424000

Reexamination Certificate

active

06943075

ABSTRACT:
The present invention relates to a method for manufacturing a flash memory device. A polysilicon layer for a floating gate has a stack structure of a doped polysilicon layer and an undoped polysilicon layer, whereby the polysilicon layer is prevented from being oxidized at the interface of the polysilicon layer and a dielectric layer in the process of forming the dielectric layer or in other subsequent process. Furthermore, an oxidization-resistant property of a polysilicon layer can be further increased by nitrifying the surface of the polysilicon layer for a floating gate before a dielectric layer is formed. Thereby, the interfacial characteristics of the polysilicon layer and the dielectric layer can be improved and the layer quality of the dielectric layer can be improved while preventing the edge of the dielectric layer from becoming thick.

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