Method for manufacturing flash memory device

Details Method for manufacturing flash memory device Method for manufacturing flash memory device

2006-12-04

2008-12-16

Toledo, Fernando L (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S201000, C438S258000, C438S266000, C438S288000, C438S298000, C257SE21625, C257SE21684

Reexamination Certificate

active

07465630

ABSTRACT:
A method for manufacturing a flash memory device including the steps of forming a gate oxide film for high voltage on the whole surface of a semiconductor substrate on which a cell region, a low voltage region and a high voltage region have been formed, etching the gate oxide film for high voltage formed in the cell region and the low voltage region by a predetermined depth, by forming photoresist patterns to expose the gate oxide film for high voltage formed in the cell region and the low voltage region, and performing a wet etching process using the photoresist patterns as an etching mask, removing the entire gate oxide film for high voltage formed in the cell region and the low voltage region, by performing a cleaning process on the resulting structure, removing the photoresist patterns, forming a floating gate electrode and a control gate electrode, by sequentially forming a tunnel oxide film, a first polysilicon film, a second polysilicon film, a dielectric film, a third polysilicon film and a metal silicide film on the whole surface of the resulting structure, and patterning the resulting structure, and forming source and drain regions, by implanting ions by using the gate electrodes as an ion implant mask.

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