Method for manufacturing flash memory device

Details Method for manufacturing flash memory device Method for manufacturing flash memory device

2011-02-08

2011-02-08

Maldonado, Julio J (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S257000, C257SE21626, C257SE21640, C257SE21302

Reexamination Certificate

active

07883981

ABSTRACT:
Embodiments relate to a flash memory device and a method for manufacturing a flash memory device. According to embodiments, a method may include forming a gate on and/or over a semiconductor substrate on and/or over which a device isolation film may be formed, forming a first spacer including a first oxide pattern and a first nitride pattern on and/or over side walls of the gate, forming a source and drain area on and/or over the semiconductor substrate using the gate and spacer as masks, removing the first nitride pattern of the first spacer, and forming a second spacer including a second oxide film pattern and a second nitride film pattern on and/or over the side walls of the gate by performing an annealing process on and/or over the semiconductor substrate on and/or over which the first oxide film pattern is formed.

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patent: 10-2006-0075365 (2006-07-01), None
patent: 10-2006-0100092 (2006-09-01), None

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