Method for manufacturing flash memory cell

Details Method for manufacturing flash memory cell Method for manufacturing flash memory cell

2007-01-02

2007-01-02

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S258000, C438S593000, C438S261000, C438S775000, C438S791000, C438S508000, C438S508000, C257S314000, C257S315000, C257S316000

Reexamination Certificate

active

10880202

ABSTRACT:
Disclosed is a method for manufacturing a flash memory cell. A structure in which a floating gate, an ONO dielectric film and a control gate are stacked is formed by means of a gate mask process and an etch process. After a rapid thermal nitrification process is performed, a re-oxidization process is performed. Therefore, Si-dangling bonding broken during the gate etch process becomes a Si—N bonding structure by means of a rapid thermal nitrification process. As such, as abnormal oxidization occurring at the side of an ONO dielectric film during a re-oxidization process is prohibited, a smiling phenomenon of the ONO dielectric film is prevented.

REFERENCES:
patent: 5907183 (1999-05-01), Takeuchi
patent: 6228717 (2001-05-01), Hazama et al.
patent: 6610614 (2003-08-01), Niimi et al.
patent: 6627494 (2003-09-01), Joo et al.
patent: 2003/0119260 (2003-06-01), Kim et al.
patent: 2004/0171241 (2004-09-01), Kitamura et al.
Preliminary Notice of Rejection of the IPO for Application No. 093119261.

Affiliated with

Also associated with

Rating

Method for manufacturing flash memory cell does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing flash memory cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing flash memory cell will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3734305