Method for manufacturing field effect transistor

Details Method for manufacturing field effect transistor Method for manufacturing field effect transistor

1999-04-01

2000-10-31

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438183, 438184, H01L 21336

Patent

active

061401692

ABSTRACT:
A GaN-type field effect transistor exhibits a large input amplitude by using a gate insulating film. A channel layer and a gate insulating film are sequentially laminated on a substrate with a buffer layer therebetween. A gate electrode is formed on the gate insulating film. A source electrode and a drain electrode are disposed at the both sides of the gate electrode and are electrically connected to the channel layer via openings. The channel layer is formed from n-type GaN. The gate insulating film is made from AlN, which exhibits excellent insulation characteristics, thus increasing the Schottky barrier and achieving a large input amplitude. If the FET is operated in the enhancement mode, it is operable in a manner similar to a Si-MOS-type FET, resulting in the formation of an inversion layer.

REFERENCES:
patent: 4030942 (1977-06-01), Keenan et al.
patent: 4642879 (1987-02-01), Kawata et al.
patent: 4843024 (1989-06-01), Ito
patent: 5447874 (1995-09-01), Grivna et al.

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