Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-08-09
2005-08-09
Wilczewski, Mary (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S003000, C438S253000, C438S396000, C438S658000, C438S660000, C438S686000, C438S772000, C438S774000
Reexamination Certificate
active
06927121
ABSTRACT:
A method for manufacturing an FeRAM capacitor is employed to enhance an adhesive property between a dielectric layer and a first bottom electrode of iridium. The method including the steps of: preparing an active matrix including a semiconductor substrate, a transistor, a bit line, a first ILD, a second ILD and a storage node; forming a first bottom electrode on the second ILD and the storage node; forming a third ILD on exposed surfaces of the first bottom electrode and the second ILD; planarizing the third ILD till a top face of the first bottom electrode is exposed; forming a second bottom electrode on the top face of the bottom electrode; forming conductive oxides on exposed sidewalls of the first bottom electrode by carrying out an oxidation process; forming a dielectric layer on exposed surfaces of the first bottom electrodes, the second bottom electrode and the second ILD; and forming a top electrode on the dielectric layer.
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Hong Suk-Kyoung
Lee Kye-Nam
Oh Sang-Hyun
Yang Young-Ho
Blakely & Sokoloff, Taylor & Zafman
Hynix / Semiconductor Inc.
Thomas Toniae M.
Wilczewski Mary
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