Method for manufacturing electrostatic discharge protection devi

Details Method for manufacturing electrostatic discharge protection devi Method for manufacturing electrostatic discharge protection devi

1997-10-27

1999-08-10

Chang, Joni

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

H01L 21336

Patent

active

059372982

ABSTRACT:
A method for forming electrostatic discharge protection devices that includes the steps of forming a transistor, which comprises a gate, a source region, a drain region, on a semiconductor substrate. Then, an insulating layer is formed over the transistor. Next, the insulating layer above the gate is removed, which represents one characteristic of this invention. Subsequently, a photolithographic processing operation is performed to form a photoresist layer over the substrate. The photoresist layer covers the insulating layer above the gate and the drain region while exposing the insulating layer above the source region. Thereafter, using the photoresist layer as a mask, the exposed insulating layer above the source region is removed. Next, the photoresist layer is removed. Finally, a self-aligned silicide processing operation is performed to form a silicide layer over the gate and the source region. Since no silicide layer is formed over the drain terminal, burnout of the drain terminal due to overheating can be avoided.

REFERENCES:
patent: 4874713 (1989-10-01), Gioia
patent: 5262344 (1993-11-01), Mistry
patent: 5413969 (1995-05-01), Huang

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