Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-03-04
2008-03-04
Smith, Zandra V. (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S517000, C438S530000, C438S532000, C438S592000, C438S655000
Reexamination Certificate
active
10897846
ABSTRACT:
The present invention provides a method of manufacturing a semiconductor device. The semiconductor device (100), among other possible elements, includes a first transistor (120) located over a semiconductor substrate (110), wherein the first transistor (120) has a gate electrode (135) that includes a metal silicide layer135aover which is located a silicon gate layer (135b) together which have a work function associated therewith, and a second transistor (125) located over the semiconductor substrate (110) and proximate the first transistor (120), wherein the second transistor (125) also includes a gate electrode (160) that includes a metal silicide layer (160a) over which is located a silicon gate layer (160b) together which have a different work function from that of the first gate electrode (135) associated therewith.
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Colombo Luigi
Murto Robert W.
Visokay Mark R.
Brady III W. James
Duong Khanh
Smith Zandra V.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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