Method for manufacturing DRAM capacitor

Details Method for manufacturing DRAM capacitor Method for manufacturing DRAM capacitor

1998-05-27

2000-06-27

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438255, 438254, H01L 218242

Patent

active

060806192

ABSTRACT:
A method for manufacturing a DRAM capacitor is provided to form a lower electrode with a cylindrical profile by using a first stage and a second stage. The stages provide different etching rates in various situations. The invention uses the stages to allow the part of the second polysilicon layer between the capacitors to be completely etched and prevent the other part of the second polysilicon layer serving as a lower electrode from over-etching. The invention provides an easier process of forming a cylindrical capacitor with a larger surface.

REFERENCES:
patent: 5946571 (1999-08-01), Hsue et al.

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