Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-04-06
1999-03-30
Nguyen, Tuan H.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438254, 438396, 438397, H01L 218242
Patent
active
058888659
ABSTRACT:
A method for manufacturing a DRAM capacitor whose lower electrode has a greater surface area, and is thereby able to increase the capacitance of the capacitor. The method comprises the steps of providing a substrate with a target conductive region and then depositing a first dielectric layer, an etching stop layer and a second dielectric layer sequentially over the target conductive region and the substrate. Next, a deep opening leading to the target conductive region is etched through the various layers, and a first conductive material is deposited to fill the deep opening completely. Thereafter, the second dielectric layer is patterned and etched to form a shallow opening exposing a portion of the first conductive layer and the etching stop layer. Then, a second conductive material is deposited into the exposed first conductive layer and etching stop layer. Finally, the second dielectric layer is removed, and then another dielectric layer and a third conductive layer are sequentially formed over the second conductive layer and the first conductive layer to complete the fabrication of the capacitor. In addition to increasing the surface area of the lower electrode, the capacitor of this invention has a small overall height measuring from the conductive layer to the substrate.
REFERENCES:
patent: 5702989 (1997-12-01), Wang et al.
patent: 5744389 (1998-04-01), Kim
patent: 5763304 (1998-06-01), Tseng
Nguyen Tuan H.
United Microelectronics Corp.
LandOfFree
Method for manufacturing dram capacitor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for manufacturing dram capacitor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing dram capacitor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1214300