Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-01-04
2010-11-02
Such, Matthew W (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S609000, C257SE21159
Reexamination Certificate
active
07825021
ABSTRACT:
It is an object of the present invention to provide a method for manufacturing a highly reliable display device with a preferable yield. A method for manufacturing a display device according to the invention comprises the steps of: forming a first electrode including a conductive material added with a material which prevents crystallization; forming a layer containing an organic compound over the first electrode by heating the first electrode under a reduced pressure at temperatures of 350° C. or higher; and forming a second electrode over the layer containing an organic compound. It is preferable to perform the heat treatment at temperatures of 350° C. or higher, preferably, 375° C. or higher for 12 hours or longer. When the first electrode is formed by using indium tin oxide containing silicon oxide, a highly display device can be manufactured.
REFERENCES:
patent: 5264077 (1993-11-01), Fukui et al.
patent: 5529937 (1996-06-01), Zhang et al.
patent: 5648276 (1997-07-01), Hara et al.
patent: 5883016 (1999-03-01), Chan et al.
patent: 5950077 (1999-09-01), Ohue et al.
patent: 5972527 (1999-10-01), Kaijou et al.
patent: 6222314 (2001-04-01), Arai et al.
patent: 6416888 (2002-07-01), Kawamura et al.
patent: 6448158 (2002-09-01), Peng et al.
patent: 6452341 (2002-09-01), Yamauchi et al.
patent: 6492778 (2002-12-01), Segawa
patent: 6533965 (2003-03-01), Sasaki et al.
patent: 6541918 (2003-04-01), Yudasaka
patent: 6614174 (2003-09-01), Urabe et al.
patent: 6680577 (2004-01-01), Inukai et al.
patent: 6893887 (2005-05-01), Yamagata et al.
patent: 7057208 (2006-06-01), Akimoto et al.
patent: 7190114 (2007-03-01), Yamagata et al.
patent: 7205716 (2007-04-01), Yamazaki et al.
patent: 7517620 (2009-04-01), Kim et al.
patent: 2001/0008710 (2001-07-01), Takatsuji et al.
patent: 2002/0020840 (2002-02-01), Nakajima
patent: 2002/0153831 (2002-10-01), Sakakura et al.
patent: 2002/0192885 (2002-12-01), Miyasaka
patent: 2003/0153182 (2003-08-01), Yamazaki et al.
patent: 2003/0164290 (2003-09-01), Chen et al.
patent: 2003/0197178 (2003-10-01), Yamazaki et al.
patent: 2003/0218153 (2003-11-01), Abe
patent: 2005/0052127 (2005-03-01), Sakata et al.
patent: 2005/0062409 (2005-03-01), Yamazaki et al.
patent: 2005/0082966 (2005-04-01), Yamazaki et al.
patent: 2005/0093432 (2005-05-01), Yamazaki et al.
patent: 2006/0214168 (2006-09-01), Akimoto et al.
patent: 06234521 (1994-08-01), None
patent: 11323531 (1999-11-01), None
patent: 2000-357586 (2000-12-01), None
patent: 2002-208479 (2002-07-01), None
patent: 2002-319495 (2002-10-01), None
patent: 2003-297558 (2003-10-01), None
Bernstein, J.D. and Chan, C. “Hydrogenation of Polycrystalline Silicon Thin Film Transistors by Plasma Ion Implantation.” IEEE Electron Device Letters. vol. 16 (1995): 421-423.
Mason, M.G, et al. “Characterization of Treated Indium-Tin-Oxide Surfaces Used in Electroluminescent Devices.” Journal of Applied Physics, vol. 86, No. 3 (Aug. 1, 1999): pp. 1688-1692.
Jung, Y.S. “A Spectroscopic Ellipsometry Study on the Variation of the Optical Constants of Tin-Doped Indium Oxide Thin Films during Crystallization.” Solid State Communications, vol. 129 (2004): pp. 491-495.
Hu, Y., et al. “Effect of Heat Treatment on Properties of ITO Films Prepared by RF Magnetron Sputtering.” Vacuum, vol. 75 (2004): pp. 183-188.
Guillen, C. And Herrero, J. “Electrical Contacts on Polyimide Substrates for Flexible Thin Film Photovoltaic Devices.” Thin Solid Films, vol. 431-432 (2003): pp. 403-406.
Akimoto Kengo
Takayama Toru
Tokunaga Hajime
Yamazaki Shunpei
Fish & Richardson P.C.
Semiconductor Energy Laboratory Co,. Ltd.
Such Matthew W
LandOfFree
Method for manufacturing display device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for manufacturing display device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing display device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4252185