Method for manufacturing differential isolation structures...

Details Method for manufacturing differential isolation structures... Method for manufacturing differential isolation structures...

2004-07-12

2010-10-26

Nguyen, Dao H (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S258000, C438S259000, C438S287000, C438S735000, C438S769000, C257S296000, C257S410000, C257S411000, C257SE21625, C257SE21639, C257SE27081

Reexamination Certificate

active

07820504

ABSTRACT:
Embodiments of this invention relate to a method for manufacturing isolation structures with different depths in a monolithically integrated semiconductor electronic device. An inventive method according to an embodiment of the invention comprises a first step of defining active areas on a semiconductor material substrate, a second step of forming isolation structures by realising trenches in said substrate and then filling them with field oxide, a third step of defining lithographically at least a first device area, and a fourth step of realising a digging in the substrate and in the field oxide of said first device area.

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European Search Report, EP03425459, Mar. 26, 2004.

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